2SB1023 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – 2SB1023

JMnic
Silicon PNP Power Transistors
Product Specification
2SB1023
DESCRIPTION
With TO-220Fa package
High DC current gain
Low saturation voltage
Complement to type 2SD1413
APPLICATIONS
Power amplifier and switching applications
Hammer drive,pulse motor drive applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector -emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
-60
-40
-5
-3
-0.5
20
150
-55~150
UNIT
V
V
V
A
A
W