2SB1007 Datasheet, PDF (1/3 Pages) Rohm – Epitaxial Planar PNP Silicon Transistor

JMnic
Silicon PNP Power Transistors
Product Specification
2SB1007
DESCRIPTION
With TO-126 package
Complement to type 2SD1378
High breakdown voltage
APPLICATIONS
Low frequency power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25
T_C=25
VALUE
-80
-80
-5
-0.7
1.2
10
150
-55~150
UNIT
V
V
V
A
W