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2SA634_15 Datasheet, PDF (1/1 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Power Transistors
Power Transistors
2SA634
Silicon PNP Transistors
www.jmnic.com
Features
With TO-220 package
BCE
Absolute Maximum Ratings Tc=25
SYMBOL
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Base collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
RATING
40
40
5.0
3.0
10
150
-55~+150
UNIT
V
V
V
A
A
W
TO-220
Electrical Characteristics Tc=25
SYMBOL
ICBO
IEBO
ICEO
VCBO
VCEO(SUS)
VEBO
VCE(sat-1)
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter cut-off current
Collector-base breakdown voltage
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
CONDITIONS
VCB=40V; IE=0
VEB=5.0V; IC=0
VCE=40V; IB=0
IC=1mA; IB=0
IE=1mA; Ic=0
IC=3A; IB=0.3A
VCE(sat-2)
Collector-emitter saturation voltages
hFE-1
hFE-2
hFE-3
VBE(sat)1
VBE(sat)1
fT
Cob
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Base-emitter stauration voltages
Base-emitter stauration voltages
Transition frepuency
Output Capacitance
IC=1A; VCE=5V
IC=3A; IB=0.3A
MIN TYPE
MAX
200
200
0.5
UNIT
uA
uA
mA
40
V
5
1.0
V
40
1.5
V