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2SA633_15 Datasheet, PDF (1/1 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Power Transistors
Power Transistors
2SA633
Silicon PNP Transistors
Features
With TO-202 package
Absolute Maximum Ratings Tc=25
SYMBOL
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Base collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
RATING
30
30
5.0
2.0
10
150
-55~+150
UNIT
V
V
V
A
A
W
www.jmnic.com
BCE
TO-202
Electrical Characteristics Tc=25
SYMBOL
ICBO
IEBO
ICEO
VCBO
VCEO(SUS)
VEBO
VCE(sat-1)
VCE(sat-2)
hFE-1
hFE-2
hFE-3
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter cut-off current
Collector-base breakdown voltage
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
CONDITIONS
VCB=30V; IE=0
VEB=5.0V; IC=0
VCE=30V; IB=0
IC=20mA; IB=0
IE=1mA; Ic=0
IC=1.5A; IB=0.15A
IC=1A; VCE=5V
MIN TYPE
MAX
100
100
0.5
UNIT
uA
uA
mA
30
V
5
1.0
V
80