2SA1741 Datasheet, PDF (1/4 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

JMnic
Silicon PNP Power Transistors
Product Specification
2SA1741
DESCRIPTION
With TO-220F package
Low collector saturation voltage
APPLICATIONS
For use as a driver in DC/DC
converters and actuators
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-Peak
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25
T_C=25
VALUE
-100
-60
-7
-5
-10
-2.5
2.0
25
150
-55~150
UNIT
V
V
V
A
A
A
W