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2N6671_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors
JMnic
Silicon NPN Power Transistors
Product Specification
2N6671 2N6672 2N6673
DESCRIPTION
With TO-3 package
Low saturation voltage
Fast switching speed
High voltage ratings
APPLICATIONS
Off-line power supplies
High-voltage inverters
Switching regulators
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N6671
VCBO
Collector-base voltage 2N6672 Open emitter
2N6673
2N6671
VCEO
Collector-emitter voltage 2N6672 Open base
2N6673
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
IB
Base current
PD
Total Power Dissipation
TC=25
Tj
Junction temperature
Tstg
Storage temperature
VALUE
450
550
650
300
350
400
8
8
10
4
150
200
-65~200
UNIT
V
V
V
A
A
A
W