2N6543 Datasheet, PDF (1/1 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Transistors

Power Transistors
2N6543
Silicon NPN Transistors
Features
Intended for high voltage,fast switching applications
With TO-3 package
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
V_CBO Collector to base voltage
V_CEO Collector to emitter voltage
V_EBO Emitter to base voltage
I_CP Peak collector current
I_C
Collector current
P_C Collector power dissipation
T_j Junction temperature
T_stg Storage temperature
RATING
850
400
9.0
16
5.0
100
200
-65~200
UNIT
V
V
V
A
A
W
Electrical Characteristics Tc=25
SYMBOL
I_CBO
I_EBO
I_CEO
V_CBO
V_(BR)CEO
V_EBO
V_CEsat-1
V_CEsat-2
V_CEsat-3
V_CEsat-4
h_FE-1
h_FE-2
h_FE-3
h_FE-4
V_BE(sat)1
V_BE(sat)2
V_BE(sat)3
f_T
t_f
t_s
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Base-emitter saturation voltages
Base-emitter saturation voltages
Base-emitter saturation voltages
Transition frequency at f = 1MHz
Fall time
Tum-off storage time
CONDITIONS
V_CB=850V,V_BE=0
V_EB =9V; I_C=0
I_C=100mA,I_B=0
I_C =5A; I_B =1A
I_C =8A; I_B =2A
I_C=2.5A,V_CE=3V
I_C=5A,V_CE=3V
I_C =5A; I_B =1A
I_C=0.3A,V_CE=10V
JMnic
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TO-3
MIN
MAX
UNIT
0.5
mA
1.0
mA
400
V
1.5
V
5.0
V
12
60
7.0
35
1.6
V
6.0
24
MHz