2N6420 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

JMnic
Silicon PNP Power Transistors
DESCRIPTION
With TO-66 package
Continuous collector current-I_C=-1A
Power dissipation -PD=35W @T_C=25
Complement to type 2N3583
APPLICATIONS
High speed switching and linear amplifier
High-voltage operational amplifiers
Switching regulators ,converters
Deflection stages and high fidelity amplifers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Product Specification
2N6420
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
V_EBO
I_C
I_CM
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
VALUE
-250
-175
-6
-1.0
-5.0
-1.0
35
200
-65~200
UNIT
V
V
V
A
A
A
W
MAX
5.0
UNIT
/W