2N6388 Datasheet, PDF (1/3 Pages) STMicroelectronics – SILICON NPN POWER DARLINGTON TRANSISTOR

Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N6388
DESCRIPTION
With TO-220 package
High current capability
Integrated antiparallel collector-emitter diode
APPLICATIONS
It is intended for use in low and medium
frequency power applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-Peak
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance from junction to case
VALUE
80
80
5
10
15
250
65
150
-65~150
UNIT
V
V
V
A
A
mA
W
MAX
1.92
UNIT
/W
JMnic