2N6386 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(65W)

JMnic
Silicon NPN Power Transistors
Product Specification
2N6386 2N6387 2N6388
DESCRIPTION
With TO-220C package
Complement to type 2N6666/6667/6668
DARLINGTON
High DC current gain
Low collector saturation voltage
APPLICATIONS
Designed for general-purpose amplifier
and low speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
2N6386
V_CBO
Collector-base voltage 2N6387
Open emitter
2N6388
2N6386
V_CEO
Collector-emitter voltage 2N6387
Open base
2N6388
V_EBO
Emitter-base voltage
Open collector
2N6386
I_C
Collector current-DC
2N6387/6388
I_CM
Collector current-Pulse
I_B
Base current-DC
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
40
60
80
40
60
80
5
8
10
15
0.25
65
150
-65~150
UNIT
V
V
V
A
A
A
W