2N6371 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – POWER TRANSISTORS TO-3 CASE

JMnic
Silicon NPN Power Transistors
DESCRIPTION
With TO-3 package
Low collector saturation voltage
High dissipation capability
Excellent safe operating area
APPLICATIONS
Series and shunt regulators
High-fidelity amplifiers
Power-switching circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Product Specification
2N6371
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
50
40
5
15
7
117
200
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.5
UNIT
/W