2N6338_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

JMnic
Product Specification
Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341
DESCRIPTION
With TO-3 package
High DC current gain
Fast switching times
Low collector saturation voltage
Complement to type 2N6436~38
APPLICATIONS
For use in industrial-military power amplifier
and switching circuit applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6338
V_CBO
Collector-base voltage
2N6339
2N6340
2N6341
2N6338
V_CEO
2N6339
Collector-emitter voltage
2N6340
2N6341
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_BC
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
120
140
160
180
100
120
140
150
6
25
50
10
200
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
0.875
UNIT
/W