2N6296_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

Product Specification
Silicon PNP Power Transistors
www.jmnic.com
2N6296 2N6297
DESCRIPTION
With TO-66 package
DARLINGTON
Complement to type 2N6294/6295
APPLICATIONS
For high gain amplifier and medium
speed switching applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
2N6296
2N6297
V_CEO
2N6296
Collector-emitter voltage
2N6298
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-Peak
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
60
80
60
80
5
4
8
80
50
150
-65~200
UNIT
V
V
V
A
A
mA
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance from junction to case
MAX
3.5
UNIT
/W
JMnic