2N6259_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N6259
DESCRIPTION
With TO-3 package
Low collector saturation voltage
High power dissipation
APPLICATIONS
Designed for high power audio ,disk head
positioners,linear amplifiers,switching regulators
solenoid drivers,and DC-DC converters or inverters
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
I_BM
Base current-peak
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
Fig.1 simplified outline (TO-3) and symbol
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
170
150
7
16
30
4
15
150
200
-65~200
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
1.17
UNIT
/W
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