2N6132_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

Product Specification
Silicon PNP Power Transistors
DESCRIPTION
With TO-220 package
High power dissipation
Complement to NPN type :
2N6129 2N6130 2N6131
APPLICATIONS
Power amplifier and medium speed
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
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2N6132 2N6133 2N6134
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
2N6132
V_CBO
Collector-base voltage 2N6133
2N6134
2N6132
V_CEO
Collector-emitter voltage 2N6133
2N6134
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance from junction to case
VALUE
40
60
80
40
60
80
5
7
3
50
150
-65~150
UNIT
V
V
V
A
A
W
MAX
2.5
UNIT
/W
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