2N6058_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N6058/2N6059
DESCRIPTION
With TO-3 package
High gain
High current
High dissipation
Complement to type 2N5883/2N5884
APPLICATIONS
They are intended for use in power linear
and low frequency switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base
voltage
2N6058
2N6059
V_CEO
Collector-emitter ^2N6058
voltage
2N6059
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
80
100
80
100
5
12
20
0.2
150
200
-65~200
UNIT
V
V
V
A
A
mA
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
1.17
UNIT
/W
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