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2N6029 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors
Product Specification
Silicon PNP Power Transistors
www.jmnic.com
2N6029 2N6030
DESCRIPTION
With TO-3 package
Complement to type 2N5629 2N5630
APPLICATIONS
For high voltage and high power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N6029
2N6030
VCEO
2N6029
Collector-emitter voltage
2N6030
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
100
120
100
120
7
16
20
5.0
200
150
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
0.875
UNIT
/W
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