2N5883 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,200W)

Product Specification
Silicon PNP Power Transistors
www.jmnic.com
2N5883 2N5884
DESCRIPTION
With TO-3 package
Complement to type 2N5885 2N5886
APPLICATIONS
They are intended for use in power linear
and switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base
voltage
2N5883
2N5884
V_CEO
Collector-emitter ^2N5883
voltage
2N5884
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
60
80
60
80
5
25
50
7.5
200
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
0.875
UNIT
/W
JMnic