2N5881_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N5881 2N5882
DESCRIPTION
With TO-3 package
Low collector-emitter saturation voltage
Complement to type 2N5879 2N5880
APPLICATIONS
For general-purpose power amplifier
and switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
2N5881
2N5882
V_CEO
Collector-emitter
voltage
2N5881
2N5882
V_EBO
I_C
Emitter-base voltage
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
60
80
60
80
5
15
30
5
160
150
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
1.1
UNIT
/W
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