2N5758_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N5758 2N5759 2N5760
DESCRIPTION
With TO-3 package
Low collector-emitter saturation voltage
APPLICATIONS
For use in high power audio amplifier
applications and high voltage switching
regulator circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N5758
V_CBO
Collector-base voltage 2N5759
2N5760
2N5758
V_CEO
Collector-emitter voltage 2N5759
2N5760
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
100
120
140
100
120
140
7
6
10
4
150
150
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
JMnic
VALUE
1.17
UNIT
/W