2N5745 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
Product Specification
2N4398 2N4399 2N5745
DESCRIPTION
With TO-3 package
Complement to type 2N5301/5302/5303
Low collector saturation voltage
Excellent safe operating area
APPLICATIONS
For use in power amplifier and switching
circuits applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N4398
V_CBO
Collector-base voltage 2N4399
2N5745
2N4398
V_CEO
Collector-emitter voltage 2N4399
2N5745
V_EBO
Emitter-base voltage
I_C
Collector current
2N4398/4399
2N5745
I_B
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
-40
-60
-80
-40
-60
-80
-5
-30
-20
-7.5
200
200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
0.875
UNIT
/W