2N5741_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

Product Specification
Silicon PNP Power Transistors
www.jmnic.com
2N5741 2N5742
DESCRIPTION
With TO-3 package
Low collector-emitter saturation voltage
Fast switching speed
APPLICATIONS
For general–purpose switching
and power amplifier applications.
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
2N5741
2N5742
V_CEO
Collector-emitter voltage
2N5741
2N5742
V_EBO
Emitter-base voltage
I_C
Collector current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=100
VALUE
60
100
60
100
5
20
65
150
-65~200
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
0.875
UNIT
/W
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