2N5498 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
DESCRIPTION
With TO-3 package
High DC current gain and low saturation voltage
High Safe Operating Area
APPLICATIONS
Designed for high power audio, disk head
positioners and other linearapplications.
These devices can also be used in power
switching circuits such as relay or solenoid
drivers, DC-DC converters or inverters.
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
www.jmnic.com
2N5498
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
150
130
7
15
4
200
150
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.17
UNIT
/W
JMnic