2N4898 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(1A, 25W)

Product Specification
Silicon PNP Power Transistors
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2N4898 2N4899 2N4900
DESCRIPTION
With TO-66 package
Low collector-emitter saturation voltage
Excellent safe operating area
2N4900 complement to type 2N4912
APPLICATIONS
Designed for driver circuits,switching
and amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N4898
V_CBO
Collector-base voltage 2N4899
2N4900
2N4898
V_CEO
Collector-emitter voltage 2N4899
2N4900
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
40
60
80
40
60
80
5
1.0
4.0
1.0
25
150
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
7.0
UNIT
/W
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