2N3055_15 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – COMPLEMENTARY SILICON POWER TRANSISTORS

Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N3055
DESCRIPTION
With TO-3 package
Complement to type MJ2955
DC Current Gain -h_FE = 20–70 @ I_C = 4 Adc
Collector–Emitter Saturation Voltage -
V_CE(sat) = 1.1 Vdc (Max) @ I_C = 4 Adc
Excellent Safe Operating Area
APPLICATIONS
Designed for general–purpose switching
and amplifier applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
100
60
7
15
7
115
150
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
1.52
UNIT
/W