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SR820 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 60 Volts CURRENT 8.0 Amperes)
R
SEMICONDUCTOR
SR820 THRU SR8200
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts
Forward Current - 8.0Amperes
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Metal silicon junction ,majority carrier conduction
Guard ring for overvoltage protection
Low power loss ,high efficiency
High current capability ,Low forward voltage drop
Single rectifier construction
High surge capability
JF
SR860
For use in low voltage ,high frequency inverters,
free wheeling ,and polarity protection applications
High temperature soldering guaranteed:260°C/10 seconds,
0.25"(6.35mm)from case
0.159(4.05)
0.140(3.55)
Component in accordance to RoHS 2011/65/EU
0.053(1.34)
0.047(1.20)
MECHANICAL DATA
Case: JEDEC TO-220AC molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked
Mounting Position: Any
TO-220AC
0.410(10.42)
0.388(9.85)
PIN
1
2
0.161(4.10)
0.147(3.74)
DIA
0.113(2.88)
0.102(2.60)
0.185(4.70)
0.175(4.44)
0.283(7.20)
0.244(6.20)
0.055(1.39)
0.045(1.14)
0.610(15.50)
0.571(14.50)
0.037(0.94)
0.027(0.68)
1.161(29.50)
1.106(28.10)
0.560(14.22)
0.512(13.00)
0.114(2.90)
0.098(2.50)
0.208(5.28)
0.192(4.88)
0.023(0.58)
0.014(0.35)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25°C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(see Fig.1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 8.0 A(Notes 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Notes 1)
TA=25°C
TA=100°C
TA=125°C
Typical thermal resistance (Notes 2)
Operating junction temperature range
Storage temperature range
Symbols
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
RθJC
TJ
TSTG
SR
SR
SR
SR
SR
SR
820
830
840
860
8100
8150
20
30
40
60
100
150
14
21
28
42
70
105
20
30
40
60
100
150
8.0
150.0
0.60
200
5
-
0.75
0.85
0.90
50
-
5
2.5
-55 to+150
-55 to+150
Notes: 1.Pulse test: 300 s pulse width,1% duty cycle
2.Thermal resistance from junction to case
SR
8200
200
140
200
0.95
Units
Volts
Volts
Volts
Amps
Amps
Volts
μA
mA
°C/W
°C
°C
JINAN JINGHENG ELECTRONICS CO., LTD.
2-1
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