MURF1020 Datasheet, PDF (1/2 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – ULTRAFAST PLASTIC RECTIFIER

R
SEMICONDUCTOR
MURF1020 THRU MURF1060
GLASS PASSIVATED SUPER FAST RECTIFIER
Reverse Voltage - 200 -600 Volts
Forward Current - 10.0Amperes
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Fast switching for high efficiency
Low forward voltage drop
Single rectifier construction
High surge capability
For use in low voltage ,high frequency inverters,
free wheeling ,and polarity protection applications
JF
MURF1060
High temperature soldering guaranteed:260°C/10 seconds,
0.25"(6.35mm)from case
Component in accordance to RoHS 2011/65/EU
0.177(4.50)
0.138(3.50)
0.056(1.43)
0.043(1.10)
MECHANICAL DATA
Case: JEDEC ITO-220AC molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08ounce, 2.24 gram
0.410(10.42)
0.388(9.85)
ITO-220AC
0.140(3.55)
0.128(3.25)
DIA
0.111(2.83)
0.101(2.57)
0.187(4.75)
0.167(4.25)
0.272(6.90)
0.256(6.50)
0.130(3.31)
0.110(2.81)
PIN
1
2
0.029(0.73)
0.019(0.47)
0.208(5.28)
0.192(4.88)
1.161(29.50)
1.083(27.50)
0.551(14.00)
0.496(12.60)
0.136(3.45)
0.102(2.60)
0.029(0.73)
0.019(0.47)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25°C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current(see Fig.1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 10.0 A(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
TA =25°C
TA =125°C
Maximum Reverse Recovery Time (Note 2)
Symbols
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
Trr
MURF
1020
200
140
200
0.975
Typical thermal resistance (Note 3)
RθJC
Operating junction temperature range
Storage temperature range
TJ
TSTG
Notes: 1. Pulse test: 300μs pulse width,1% duty cycle
2. Reverse recovery test conditions IF=0.5A,IR=1.0A, Irr=0.5A
3. Thermal resistance from junction to case
MURF
1040
400
280
400
10.0
115200.0
1.3
5
250
35
3.0
-55 to+150
-55 to+150
MURF
1060
600
420
600
1.7
Units
Volts
Volts
Volts
Amps
Amps
Volts
μA
ns
°C/W
°C
°C
JINAN JINGHENG ELECTRONICS CO., LTD.
9-24
HTTP://WWW.JINGHENGGROUP.COM