MCL4148 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diodes

R
SEMICONDUCTOR
MCL4148
SMALL SIGNAL SWITCHING DIODE
FEATURES
Silicon epitaxial planar diode
Fast switching diode
500mW power dissipation
This diode is also available in other case styles including: the DO-35
case with the type designation 1N4148, the MiniMelf case with the
type designation LL4148, the SOD-123 case with the type designation
1N4148W, the SOD-323 case with the type designation 1N4148WS, the
SOD-523 case with the type designation 1N4148WT.
MicroMelf
0.026(0.48)
0.016(0.28)
0.051(1.30)
0.047(1.20)
MECHANICAL DATA
0.079(2.0)
0.071(1.8)
Case: MicroMELF glass case
Weight: Approx. 0.03gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
Average rectified current, Half wave rectification with
Resistive load at TA=25°C and f 50Hz
Non-Repetitive Peack Forward Surge Current @t=1.0s
Power dissipation at TA=25°C
Junction temperature
Storage temperature range
Symbol
VR
VRM
IAV
IFSM
Ptot
TJ
TSTG
Value
75
100
150
500
500
175
-65 to +175
Units
Volts
Volts
mA
mA
mW
C
C
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Forward voltage
Leakage current
at IF=50mA
at VR=20V
at VR=75V
at VR=20V , TJ=150°C
Junction capacitance at VR=VF=0V
Voltage rise when switching on tested with 50mA
pulse tP=0.1ms, Rise time<30ms, fP=5 to 100kHz
Reverse recovery time from IF=10mA to IR=1mA,
VR=6V, RL=100W
Thermal resistance junction to ambient
Rectification efficiency at f=100MHz, VRF=2V
Symbol
VF
IR
IR
IR
CJ
Vfr
trr
R JA
Min.
0.45
Typ.
Max
1
25
5
50
4
2.5
4
500
Units
Volts
nA
nA
nA
pF
Volts
ns
K/W
JINAN JINGHENG ELECTRONICS CO., LTD.
11-8
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