LLDB3 Datasheet, PDF (1/2 Pages) Formosa MS – DIAC

R
SEMICONDUCTOR
LLDB3/LLDC34/LLDB4/LLDB6
SILICON BIDIRECTIONAL DIAC
FEATURES
The three-layer, two-terminal, axial-lead, hermetically sealed diacs are
designed specifically for triggering thyristors. They demonstrate low breakover
current at breakover voltage as they withstand peak pulse current. The breakover
symmetry is within three volts(DB3,DC34,DB4) or four volts(DB6). These diacs are
intended for use in thyrisitors phase control , circuits for lamp dimming, universal
motor speed control and heat control.
JF's DB3/DC34/DB4/DB6 are bi-directional triggered diode designed to operate
in conjunction with Triacs and SCR's
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
Case: MiniMELF glass case(SOD-80)
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
MiniMELF
0.142(3.6)
0.126(3.2)
0.063(1.6)
0.055(1.4)
0.019(0.48)
0.011(0.28)
Dimensions in inches and (millimeters)
Symbols
Parameters
PC
Power Dissipation on Printed
Circuit(L=10mm)
TA=50 C
ITRM
Repetitive Peak on-state
Current
tp=10ms
f=100Hz
TSTG/TJ
Storage and Operating Junction Temperature
ELECTRICAL CHARACTERISTICS
Value
LLDB3 LLDC34 LLDB4
150
LLDB6
2.0
1.6
-40 to+125
Units
mW
A
C
Symbols
Parameters
VBO
│+VBO│-
│-VBO│
│+ V│
VO
IBO
tr
IB
Breakover Voltage (Note 2 )
Breakover Voltage Symmetry
Dynamic Breakover Voltage (Note1)
Output Voltage (Note 1 )
Breakover Current (Note1)
Rise Time (Note1)
Leakage Current (Note1)
Test Condition
C=22nF(Note 2)
Min
See diagram 1
Typ
Max
C=22nF(Note 2)
Max
See diagram 1
I=(IBO to IF=10mA)
See Diagram 1
Min
See Diagram 2
Min
C=22nF(Note 2)
Max
See Diagram 3
Typ
VB=0.5 VBO max
see diagram 1
Max
LLDB3
28
32
36
Value
LLDC34
30
34
38
LLDB4
35
40
45
LLDB6
56
60
70
+3
+4
Units
V
V
5
10
V
5
V
100
mA
1.5
ms
10
mA
Notes: 1.Electrical characteristics applicable in both forward and reverse directions.
2.Connected in parallel with the devices.
JINAN JINGHENG ELECTRONICS CO., LTD.
3-4
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