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LL700 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON EXPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES
R
SEMICONDUCTOR
LL700/LL700A
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Low forward voltage drop
Satisfactory wave detection efficiency
Small temperature coefficient of forward characteristics
Extremely low reverse current
These products are ideal for use in ordinary wave detection
and super high speed switching circuits
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2011/65/EU
MECHANICAL DATA
Case: MiniMELF glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
MiniMELF
0.142(3.6)
0.126(3.2)
0.063(1.6)
0.055(1.4)
0.019(0.48)
0.011(0.28)
Dimensions in inches and (millimeters)
Reverse voltage
Peak revers voltage
Average rectified current
Peak forward current
Junction temperature
Storage temperature
Parameters
LL700
LL700A
LL700
LL700A
ELECTRICAL CHARACTERISTICS
Symbols
VR
VRM
Io
IFM
TJ
TSTG
(TA= 25°C)
Value
15
30
15
30
30
150
125
-55 to+125
Units
V
V
mA
mA
°C
°C
Parameters
Forward voltage(DC)
Reverse
Current
LL700
LL700A
Junction Capacitance
Rectifier efficiency
Reverse recovery time
Symbols
VF1
VF2
IR
CJ
h
trr
Test Conditions
IF=1mA
IF=30mA
VR=15V
VR=30V
VR=1V f=1MHz
Vin=3Vrms f=30MHz
RL=3.9kW CL=10pF
IF=IR=10mA
Irr=1mA,RL=100kW
Min.
Typ.
1.3
60
1
Max.
0.4
1
100
150
Unis
V
V
nA
pF
%
ns
Note: 1.Schottky barrier rectifier diode is sensitive to electric shock(static electricity, etc.).Due attention must be paid
on charge of a human body and leakage from the equipment used.
JINAN JINGHENG ELECTRONICS CO., LTD.
2-1
HTTP://WWW.JINGHENGGROUP.COM