LL5817 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 1.0 AMP. Surface Mount Schottky Barrier Rectifiers

R
SEMICONDUCTOR
LL5817 THRU LL5819
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 40 Volts
Forward Current - 1.0Ampere
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Metal silicon junction ,majority carrier conduction
For surface mount applications
Guard ring for overvoltage protection
Low power loss ,high efficiency
JF
High current capability ,Low forward voltage drop
High surge capability
For use in low voltage ,high frequency inverters,
free wheeling ,and polarity protection applications
High temperature soldering guaranteed:260 C/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
MECHANICAL DATA
Case: JEDEC Mini MELF(DO-213AA) molded plastic body
Terminals: Solder Plated, solderable per MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.0005ounce, 0.015 gram
MiniMELF(DO-213AA)
SOLDERABLE ENDS
1st BAND
D2
0.018(0.45)
0.010(0.25)
0.144(3.65)
0.136(3.45)
D1=
0.067(1.7)
0.059(1.5)
D2=D1+-00.008(0.203)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load, derate by 20%.)
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
current 0.375"(9.5mm)lead length (see Fig. 1 )
Symbols
VRRM
VRMS
VDC
I(AV)
LL
5817
20
14
20
LL
5818
30
21
30
1.0
LL
5819
40
28
40
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method) at TL=70 C
Maximum instantaneous forward voltage at 1.0 A(Note 1 )
Maximum instantaneous forward voltage at 3.1 A(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
T A=25 C
T A=100 C
Typical junction capacitance(Note 2)
Typical thermal resistance (Note 3)
Operating junction and storage temperature range
IFSM
VF
VF
IR
CJ
R JA
R JL
TJ /TSTG
0.450
0.750
25.0
0.550
0.875
0.2
10.0
80.0
75.0
30.0
-55 to +150
0.600
0.900
Notes: 1.Pulse test: 300 s pulse width,1% duty cycle
2.Measured at 1MHZ and reverse voltage of 4.0Volts
3.Thermal resistance (from junction to ambient),0.24X0.24"copper pads to each terminials
Units
Volts
Volts
Volts
Amp
Amps
Volts
Volts
mA
PF
C/W
C
JINAN JINGHENG ELECTRONICS CO., LTD.
1-16
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