LL5711 Datasheet, PDF (1/2 Pages) Diodes Incorporated – SCHOTTKY BARRIER SWITCHING DIODE

R
SEMICONDUCTOR
LL5711, LL6263
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
For general purpose applications
Metal-on-silicon junction Schottky barrier device which is protected by a
PN junction guard ring. The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steering, biasing and
coupling diodes for fast switching and low logic level applications
These diodes are also available in the DO-35 case with type
designation 1N5711 and 1N6263.
High temperature soldering guaranteed:260°C/10 seconds at terminals
Component in accordance to RoHS 2011/65/EU
MECHANICAL DATA
Case: MiniMELF glass case(SOD-80 )
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Peak Reverse Voltage
LL5711
LL6263
Porwer Dissipation (infinite Heat Sink)
Maximum Single cycle surge 10ms square wave
Junction temperature
Storage Temperature Range
1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25°C ambient temperature unless otherwise specified)
Symbols
VRRM
VRRM
Ptot
IFSM
TJ
TSTG
Reverse breakover voltage
LL5711
LL6263
Leakage current at VR=50V
Forward voltage drop at IF=1mA
IF=15mA
Junction Capacitance at VR=0V ,f=1MHz
Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR
Thermal resistance
Symbols
VR
VR
IR
VF
VF
CJ
trr
RθJA
Min.
70
60
MiniMELF
0.142(3.6)
0.126(3.2)
0.063(1.6)
0.055(1.4)
0.019(0.48)
0.011(0.28)
Dimensions in inches and (millimeters)
Value
70
60
400 ¹⁾
2.0
125
-55 to+150
Units
V
V
mW
A
°C
°C
Typ.
Max.
Unis
V
V
200
nA
0.41
V
1.0
V
2.0
pF
1
ns
300
°C/W
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