LL4448 Datasheet, PDF (1/3 Pages) Semtech Corporation – Silicon Expitaxial Planar Diode

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SEMICONDUCTOR
LL4448
SMALL SIGNAL SWITCHING DIODE
FEATURES
Silicon epitaxial planar diode
Fast switching diode
500mW power dissipation
This diode is also available in the DO-35 case with the type
designation 1N4448
MECHANICAL DATA
Case: MinMELF glass case(SOD- 80)
Weight: Approx. 0.05gram
MiniMelf
JF
0.063(1.6)
0.055(1.4)
0.142(3.6)
0.134(3.4)
0.019(0.48)
0.011(0.28)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
Average rectified current, Half wave rectification with
Resistive load at TA=25°C and f 50Hz
Non-Repetitive Peack Forward Surge Current @t=1.0s
Power dissipation at TA=25°C
Junction temperature
Storage temperature range
Symbol
VR
VRM
IAV
IFSM
Ptot
TJ
TSTG
Value
75
100
150
500
500
175
-65 to +175
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Forward voltage
Leakage current
at IF=5mA
at IF=100mA
at VR=20V
at VR=75V
at VR=20V , TJ=150°C
Symbol
VF
VF
IR
IR
IR
Min.
0.62
Typ.
Junction capacitance at VR=VF=0V
Reverse breakdown voltage tested with 100mA puse
Reverse recovery time from IF=10mA to IR=1mA,
VR=6V, RL=100W
Thermal resistance junction to ambient
Rectification efficiency at f=100MHz, VRF=2V
CJ
V(BR)R
trr
R JA
100
0.45
Max
0.72
1
25
5
50
4
4
500
Units
Volts
Volts
mA
mA
mW
C
C
Units
V
V
nA
mA
mA
pF
V
ns
K/W
JINAN JINGHENG ELECTRONICS CO., LTD.
11-22
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