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LL4151 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diodes
R
SEMICONDUCTOR
LL4151
SMALL SIGNAL SWITCHING DIODE
FEATURES
Silicon epitaxial planar diode
Fast switching diode
500mW power dissipation
JF
This diode is also available in the DO-35 case with the type
designation 1N4151
MECHANICAL DATA
MiniMelf
0.142(3.6)
0.134(3.4)
0.063(1.6)
0.055(1.4)
0.019(0.48)
0.011(0.28)
Case: MinMELF glass case(SOD- 80)
Weight: Approx. 0.05gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
Average rectified current, Half wave rectification with
Resistive load at TA=25 C and f 50Hz
Non-Repetitive Peack Forward Surge Current @t=1.0s
Power dissipation at TA=25°C
Junction temperature
Storage temperature range
Symbol
VR
VRM
IAV
IFSM
Ptot
TJ
TSTG
Value
50
75
150
500
500
175
-65 to +175
Units
Volts
Volts
mA
mA
mW
C
C
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Forward voltage
Leakage current
at IF=50mA
at VR=50V
Symbol
VF
IR
Min.
Typ.
Max
1
50
at VR=20V , TJ=150°C
IR
50
Junction capacitance at VR=VF=0V
CJ
2
Reverse breakdown voltage tested with 5mA
V(BR)R
75
Reverse recovery time from IF=10mA to IR=10mA to IR=1mA,
trr
4
from IF=10mA to IR=1mA VR=6V, RL=100W
trr
2
Thermal resistance junction to ambient
R JA
500
Rectification efficiency at f=100MHz, VRF=2V
0.45
Units
V
nA
mA
pF
V
ns
K/W
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11-28
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