LL4148 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Small Signal Fast Switching Diodes

R
SEMICONDUCTOR
LL4148
SMALL SIGNAL SWITCHING DIODE
FEATURES
Silicon epitaxial planar diode
Fast switching diode
500mW power dissipation
This diode is also available in other case styles including: the DO-35
case with the type designation 1N4148, the MicroMelf case with the
JF
type designation MCL4148, the SOD-123 case with the type designation
1N4148W, the SOD-323 case with the type designation 1N4148WS, the
SOD-523 case with the type designation 1N4148WT.
MECHANICAL DATA
MiniMelf
0.142(3.6)
0.134(3.4)
0.063(1.6)
0.055(1.4)
0.019(0.48)
0.011(0.28)
Case: MinMELF glass case (SOD- 80)
Weight: Approx. 0.05gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
Average rectified current, Half wave rectification with
Resistive load at TA=25°C and f 50Hz
Non-Repetitive Peack Forward Surge Current @t=1.0s
Power dissipation at TA=25°C
Junction temperature
Storage temperature range
1) _{Valid provided that electrodes are kept at ambient temperature.}
Symbol
VR
VRM
IAV
IFSM
Ptot
TJ
TSTG
Value
75
100
1)
150
500
1)
500
175
-65 to +175
Units
Volts
Volts
mA
mA
mW
C
C
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Min.
Typ.
Max
Forward voltage
at IF=10mA
VF
1
Leakage current
at VR=20V
IR
25
at VR=75V
IR
5
at VR=20V , TJ=150 C
IR
50
Junction capacitance at VR=VF=0V
CJ
4
Voltage rise when switching on tested with 50mA
Vfr
pulse tP=0.1ms, Rise time<30ms, fP=5 to 100kHz
2.5
Reverse recovery time from IF=10mA to IR=1mA,
trr
4
VR=6V, RL=100W
Thermal resistance junction to ambient
R JA
Rectification efficiency at f=100MHz, VRF=2V
0.45
1) _{Valid provided that electrodes are kept at ambient temperature.}
500 ¹⁾
Units
Volts
nA
mA
mA
pF
Volts
ns
K/W
JINAN JINGHENG ELECTRONICS CO., LTD.
11-5
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