BAT41 Datasheet, PDF (1/3 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

R
SEMICONDUCTOR
FEATURES
For general porpose applications
This diode features very low turn-on voltage and high breakdown voltage.
These devices are protected by a PN junction guard ring against excessive
voltage, such as electrostatic discharges.
The diode is also available in the MinMELF case with type designation LL41.
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
BAT41
SMALL SIGNAL SCHOTTKY DIODES
DO-35
0.079(2.0)
MAX
DIA
1.083(27.5)
MIN
0.150(3.8)
MAX
MECHANICAL DATA
Case: DO-35 glass case
Polarity:color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Repetitive Peak Reverse Voltage
Forward Continuous Current at TA=25 C
Repetitive Peak Forward Current at tp<1s, d<0.5
Surge Forward Current at tp<10mS , TA=25 C
Power Dissipation at TA=65 C
TA=25 C
VRRM
IF
IFRM
IFSM
Ptot
Junction Temperature
TJ
Ambient Operating Temperature Range
Storage Temperature Range
TA
TSTG
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
Symbols
Min.
Reverse Breakdown Voltage Tested with 100mA/300msPulses
V(BR)R
100
Forward voltage Pulse Test tp 300ms at IF=1mA
VF
IF=200mA
VF
Leakage current pulse test tp 300ms at VR=50V,TJ=25℃
IR
at VR=50V,TJ=100℃
IR
Junction Capacitance at VR=1V ,f=1MHz
CJ
Reverse Recovery Time Form IF=10mA,to IR=10mA
trr
to IR=1mA RL=100W
Thermal Resistance Junction to Ambien Air
RqJA
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35)
0.020(0.52)
MAX
DIA
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
Value
100
1)
100
1)
350
1)
750
1)
400
125
-65 to+125
-65 to+150
Units
V
mA
mA
mA
mW
C
C
C
Typ.
110
0.4
2
Max.
0.45
1.0
100
20
5
300 ¹⁾
Unis
V
V
V
nA
mA
pF
ns
K/W
JINAN JINGHENG ELECTRONICS CO., LTD.
2-16
HTTP://WWW.JINGHENGGROUP.COM