3EZ200D5 Datasheet, PDF (1/2 Pages) Jinan Jing Heng Electronics Co., Ltd. – 3W SILICON PLANAR ZENER DIODES

R
SEMICONDUCTOR
3EZ3.9D5 THRU 3EZ200D5
3W SILICON PLANAR ZENER DIODES
FEATURES
Low leakage, low zener impedance at low current
Maximum power dissipation of 3W is ideally suited for stabilized
power supply, etc.
High temperature soldering guaranteed:260°C/10 seconds at terminals
Suffix ”5” indicates ±5% zener voltage tolerance, suffix “10” indicates
±10% zener voltage tolerance.
MECHANICAL DATA
DO-15
0.144(3.6)
0.104(2.6)
DIA
1.0(25.4)
MIN
0.300(7.60)
0.230(5.60)
Case: DO-15 molded plastic
Terminals: Plated axial leads, solderable per
MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
0.036(0.90)
0.028(0.70)
DIA
1.0(25.4)
MIN
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES) (TA=25 C)
Symbols
Zener current see table "Characteristics"
Power dissipation
Ptot
Junction temperature
TJ
Storage temperature range
TSTG
1) Valid provided that a distance of 8mm from case is kept at ambient temperature
Value
3
200
-65 to+200
Units
W
C
C
ELECTRICAL CHARACTERISTICS (TA=25 C)
Symbols
Min
Thermal resistance junction to ambient
R JA
Forward voltage at IF=200mA
VF
1) Valid provided that a distance of 108mm from caseis is kept at ambient temperature
Typ
Max
Units
50 ¹⁾
C/W
1.2
V
JINAN JINGHENG ELECTRONICS CO., LTD.
10-86
HTTP://WWW.JINGHENGGROUP.COM