1SS184 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APLICATION)

R
SEMICONDUCTOR
1SS184
SMALL SIGNAL SWITCHING DIODE
FEATURES
Small package
Low forward voltage
Fast reverse recovery time
Small total capacitance
SOT-23
0.106(3.10)
0.083(2.70)
0.020(0.50)
0.014(0.35)
0.118(3.0)
0.087(2.2)
0.065(1.65)
0.047(1.20)
MECHANICAL DATA
Case: SOT-23 plastic case
0.040(1.02)
0.035(0.89)
0.08(2.04)
0.07(1.78)
0.007(0.19)
0.003(0.08)
3
0.055(1.40)
0.037(0.95)
12
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.004(0.100)
0.0005(0.013)
Dimensions in inches and (millimeters)
(Ratings at 25°C ambient temperature unless otherwise specified)
Maximum Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum Peak Forward Current
Peak Forward Surge Current(10ms)
Power dissipation
Junction temperature
Storage temperature range
Symbols
VRM
VR
IO
IFM
IFSM
Ptot
TJ
TSTG
Value
85
80
100
300
2
150
150
-55 to +150
Units
V
V
mA
mA
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(Ratings at 25°C ambient temperature unless otherwise specified)
Symbol
Min.
Typ.
Forward voltage
at IF=100mA
VF
Leakage current
at VR=30V
IR
Leakage current
at VR=80V
IR
Junction capacitance at VR=0V f=1MHz
CJ
Reverse recovery time IF=10mA
trr
Max.
1.2
0.1
0.5
3
4
Units
V
μA
μA
pF
ns
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