1SS106 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

R
SEMICONDUCTOR
1SS106
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Detection effciency is very good
Small temperature coefficient
High reliability with glass seal
For use in RECORDER, TV, RADIO, TELEPHONE as detectors,
super high speed switching circuits small current rectifier
High temperature soldering guaranteed:260°C/10 seconds at terminals
Component in accordance to RoHS 2011/65/EU
MECHANICAL DATA
Case: DO-35 glass case
Polarity:color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
(TA= 25°C)
DO-35
0.079(2.0)
MAX
DIA
1.083(27.5)
MIN
0.150(3.8)
MAX
0.020(0.52)
MAX
DIA
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
Reverse voltage
Average rectified current
Junction temperature
Storage temperature
ELECTRICAL CHARACTERISTICS
Symbols
VR
Io
TJ
TSTG
(TA= 25°C)
Value
10
30
125
-55 to+125
Units
V
mA
°C
°C
Parameters
Forward Current
Reverse Current
Junction Capacitance
Rectifier efficiency
ESD-Capability
Symbols
IF
IR
CJ
h
Test Conditions
VF=1V
VR=6V
VR=1V f=1MHz
Vin=2Vrms f=40MHz
RL=5kW CL=20pF
Min.
Typ.
Max.
Unis
4.5
mA
70
mA
1.5
pF
70
%
C=200pF(Note 1) Both forward and
100
reverse direction 1 pulse
V
Note: 1.Failure criterion: IR > 140mA at VR=6V
JINAN JINGHENG ELECTRONICS CO., LTD.
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