1N60P Datasheet, PDF (1/3 Pages) Semtech Corporation – POINT CONTACT GERMANIUM DIODE

R
SEMICONDUCTOR
1N60, 1N60P
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Metal-on-silicon junction, majority carrier conduction
High current capability, Low forward voltage drop
Extremely low reverse current IR
Ultra speed switching characteristics
Small temperature coefficient of forward characteristics
Satisfactory wave detection efficiency
For use in recorder, TV ,radio and telephone as detectors
Super high speed switching cirits, small current rectifier
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-35 glass case
Polarity:color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
DO-35
0.079(2.0)
MAX
DIA
1.083(27.5)
MIN
0.150(3.8)
MAX
0.020(0.52)
MAX
DIA
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
Symblos
VRRM
IF
IFSM
TSTG/TJ
TL
Parameters
Repetitive Peak Reverse Voltage
Forward Continuous Current
TA=25 C
Peak Forward Surge Current(t=1s)
Storage and junction Temperature Range
Maximum Lead Temperature for Soldering during 10s at 4mm from Case
Value
1N60
1N60P
40
40
30
50
150
400
-55 to+125
260
Units
Volts
mA
mA
C
C
ELECTRICAL CHARACTERISTICS
Symblos
Parameters
Test Conditions
Min.
VF
Forward Voltage
IR
Reverse Current
CJ
Junction Capacitance
IF=1mA
IF=30mA
IF=200mA
VR=15V
VR=1V f=1MHz
VR=10V f=1MHz
1N60
1N60P
1N60
1N60P
1N60
1N60P
1N60
1N60P
h
Detection Efficiency(See diagram 4)
VI=3V f=30MHz CL=10pF RL=3.8kΩ
trr
RqJA
Reverse Recovery time
Junction Ambient Thermal Resistance
IF=IR=1mA Irr=1mA Rc=100Ω
Value
Typ.
0.35
0.26
0.70
0.70
1.0
5.0
4.0
10.0
60
400
Max.
0.5
0.5
1.0
1.0
5.0
10.0
1
Units
Volts
mA
pF
%
ns
C/W
JINAN JINGHENG ELECTRONICS CO., LTD.
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