1N4448 Datasheet, PDF (1/3 Pages) Rectron Semiconductor – SIGNAL DIODE

R
SEMICONDUCTOR
1N4448
SMALL SIGNAL SWITCHING DIODE
FEATURES
Silicon epitaxial planar diode
Fast switching diode
500mW power dissipation
This diode is also available in the MiniMelf case with the type
designation LL4448
MECHANICAL DATA
DO-35 (GLASS)
0.079(2.0)
MAX
DIA
1.083(27.5)
MIN
0.150(3.8)
MAX
Case: DO-35 glass cass
Weight: Approx. 0.13gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Value
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
VR
75
VRM
100
Average rectified current, Half wave rectification with
IAV
Resistive load at TA=25 C and f 50Hz
150 ¹⁾
Non-Repetitive Peack Forward Surge Current @t=1.0s
IFSM
500
Power dissipation at TA=25 C
Ptot
500 ¹⁾
Junction temperature
TJ
200
Storage temperature range
TSTG
-65 to +200
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Forward voltage
Leakage current
at IF=5mA
at IF=100mA
at VR=20V
at VR=75V
at VR=20V , TJ=150 C
Symbol
VF
VF
IR
IR
IR
Min.
0.62
Typ.
Junction capacitance at VR=VF=0V
CJ
Reverse breakdown voltage tested with 100mA pulse
Reverse recovery time from IF=10mA to IR=1mA,
VR=6V, RL=100W
V(BR)R
trr
100
Thermal resistance junction to ambient
R JA
Rectification efficiency at f=100MHz, VRF=2V
0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
0.020(0.52)
MAX
DIA
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
Units
Volts
Volts
mA
mA
mW
C
C
Max
0.72
1
25
5
50
4
4
350 ¹⁾
Units
V
V
nA
mA
mA
pF
V
ns
K/W
JINAN JINGHENG ELECTRONICS CO., LTD.
11-19
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