1N4151 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diodes

R
SEMICONDUCTOR
FEATURES
Silicon epitaxial planar diode
Fast switching diode
500mW power dissipation
This diode is also available in the MiniMelf case with the type
designation LL4151
MECHANICAL DATA
1N4151
SMALL SIGNAL SWITCHING DIODE
DO-35 (GLASS)
0.079(2.0)
MAX
DIA
1.083(27.5)
MIN
0.150(3.8)
MAX
Case: DO-35 glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
Symbol
VR
VRM
Value
50
75
Average rectified current, Half wave rectification with
IAV
Resistive load at TA=25°C and f 50Hz
1)
150
Non-Repetitive Peack Forward Surge Current @t=1.0s
IFSM
Power dissipation at TA=25°C
Ptot
500
1)
500
Junction temperature
TJ
200
Storage temperature range
TSTG
-65 to +200
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Min.
Typ.
Forward voltage
at IF=50mA
VF
Leakage current
at VR=50V
IR
at VR=20V , TJ=150°C
IR
Junction capacitance at VR=VF=0V
CJ
Reverse breakdown voltage tested with 5mA pulse
V(BR)R
75
Reverse recovery time from IF=10mA to IR=10mA to IR=1mA,
trr
from IF=10mA to IR=1mA VR=6V, RL=100W
trr
Thermal resistance junction to ambient
Rectification efficiency at f=100MHz, VRF=2V
R JA
0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
0.020(0.52)
MAX
DIA
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
Units
Volts
Volts
mA
mA
mW
C
C
Max
1
50
50
2
4
2
1)
350
Units
V
nA
mA
pF
V
ns
K/W
JINAN JINGHENG ELECTRONICS CO., LTD.
11-25
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