1N4148WS Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

R
SEMICONDUCTOR
1N4148WS
SMALL SIGNAL SWITCHING DIODE
FEATURES
Silicon epitaxial planar diode
Fast switching diode
500mW power dissipation
This diode is also available in other case styles including: the DO-35
case with the type designation 1N4148, the MiniMelf case with the
type designation LL4148, the MicroMelf case with the type designation
JF
MCL4148, the SOD-123 case with the type designation 1N4148W, the
SOD-523 case with the type designation 1N4148WT.
MECHANICAL DATA
Case: SOD-323 plastic case
Weight: Approx. 0.004 gram
SOD-323
(0.35 ^+0.05 )
-0.05
0.014"+0.002"
-0.002"
(1.70±0.10
0.067"+-0.004
(2.55±0.25)
0.100"±0.010"
5°
0.006"(0.150)
MAX
(1.25+0.10 )
-0.10
0.049"+0.004"
-0.004"
(0.95±0.15)
0.037"±0.006"
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
Average rectified current, Half wave rectification with
Resistive load at TA=25 C and f 50Hz
Non-Repetitive Peack Forward Surge Current @t=1.0s
Power dissipation at TA=25°C
Junction temperature
Storage temperature range
Symbols
VR
VRM
IAV
IFSM
Ptot
TJ
TSTG
Value
75
100
150
350
200¹⁾
150
-65 to +150
Units
Volts
Volts
mA
mA
mW
C
C
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Forward voltage
Leakage current
at IF=10mA
at VR=20V
at VR=75V
at VR=20V , TJ=150°C
Junction capacitance at VR=VF=0V
Voltage rise when switching on tested with 50mA
pulse tP=0.1ms, Rise time<30ms, fP=5 to 100kHz
Reverse recovery time from IF=10mA to IR=1mA,
VR=6V, RL=100W
Thermal resistance junction to ambient
Rectification efficiency at f=100MHz, VRF=2V
Symbol
VF
IR
IR
IR
CJ
Vfr
trr
R JA
Min.
0.45
Typ.
Max.
1
25
5
50
4
2.5
4
650
Units
Volts
nA
mA
mA
pF
Volts
ns
K/W
JINAN JINGHENG ELECTRONICS CO., LTD.
11-14
HTTP://WWW.JINGHENGGROUP.COM