SD106WS Datasheet, PDF (1/1 Pages) General Semiconductor – SCHOTTKY DIODES

SEMICONDUCTOR
SD106WS
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Low turn-on voltage
Fast switching
Microminiature plastic package
These diodes are protected by a PN junction guard ring against excessive
voltage, such as electrostatic discharge,
JF
Ideal for protection of MOS devices, steering, and coupling diodes
for fast switching and low logic level applications
MECHANICAL DATA
Case: SOD-323 plastic case
Weight: Approx. 0.004 gram
ABSOLUTE RATINGS(LIMITING VALUES)
SOD-323
(1.7+0.1
Dimensions in inches and (millimeters)
Continuous Reverse Voltage
Power Dissipation TC=25 C
Forward Current
Junction Temperature
Storage Temperature Range
1) Valid provided that electrodes are kept at ambient temperature
Symbols
VR
Ptot
IF
TJ
TSTG
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Reverse breakdown voltage at IR=0.1mA
Leakage current at VR=30V
Symbols
Min.
VR
30
IR
Forward voltage drop at IF=2.0mA
VF
IF=15mA
VF
IF=100mA
VF
IF=200mA
VF
Junction Capacitance at VR=1V ,f=1MHz
CJ
Thermal resistance,junction to Ambient
RqJA
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
Value
30
250 ¹⁾
200
150
-65 to+150
Units
V
mW
mA
C
C
Typ.
260
320
420
490
Max.
Unis
V
5.0
nA
V
V
V
V
Max.15
pF
500 ¹⁾
K/W
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