SD103AWS Datasheet, PDF (1/1 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY BARRIER

SEMICONDUCTOR
SD103AWS THRU SD103CWS
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
For general purpose applications
The SD103AWS to SD103CWS series is a Metal-on-silicon Schottky barrier device
which is protected by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of MOS devices,
steering, biasing, and coupling diodes for fast switching and low logic
level applications. Other applications are click suppressions, efficient full
wave bridges in telephone subsets, and blocking diodes in rechargeable
low voltage battery systems.
JF
These diodes are also available in the Mini-MELF case with the type
designation LL103A toLL103C ,in the DO-35 case with type
designation SD103A to SD103C and in the SOD-123 case with type
designation SD103AW to SW103CW
MECHANICAL DATA
Case: SOD-323 plastic case
Weight: Approx. 0.004 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Peak Reverse Voltage
Power Dissipation (infinite Heat Sink)
SD103AWS
SD103BWS
SD103CWS
Maximum Single cycle surge 60Hz sine wave
Junction temperature
Storage Temperature Range
1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbols
Leakage current at VR=30V
VR=20V
VR=10V
SD103AWS
IR
SD103BWS
IR
SD103CWS
IR
Forward voltage drop at IF=20mA
VF
IF=200mA
VF
Junction Capacitance at VR=0V ,f=1MHz
CJ
Reverse Recovery time at IF=IR=50mA,recover to 200mA
recover to 0.1 IR
Thermal resistance,junction to Ambient
trr
RqJA
1) Valid provided that electrodes are kept at ambient temperature(SOD-323)
Symbols
VRRM
VRRM
VRRM
Ptot
IFSM
TJ
TSTG
Min.
SOD-323
(1.7+0.1
Dimensions in inches and (millimeters)
Value
40
30
20
400 ¹⁾
15
125
-55 to+150
Units
V
V
V
mW
A
C
C
Typ.
Max.
Unis
5
mA
5
mA
5
mA
0.37
V
0.6
V
50
pF
10
ns
650 ¹⁾
C/W
JINAN JINGHENG CO., LTD.
2-116
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