SD101AWS Datasheet, PDF (1/1 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE

SEMICONDUCTOR
SD101AWS THUR SD101CWS
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
For general purpose applications
The SD10AW to SD101CW series is a Metal-on-silicon Schottky barrier device
which is protected by a PN junction guard ring. The low forward voltage drop
and fast switching make it ideal for protection of MOS devices, steering,
biasing, and coupling diodes for fast switching and low logic level
applications
JF
These diodes are also available in the Mini-MELF case with type
designation LL101A to LL101C ,in the DO-35 case with type
designation SD101A to SD101C and in the SOD-123 case with type
designation SD101AW to SW101CW
MECHANICAL DATA
Case: SOD-323 plastic case
Weight: Approx. 0.0040 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Peak Reverse Voltage
Power Dissipation (infinite Heat Sink)
SD101AWS
SD101BWS
SD101CWS
Maximum Single cycle surge 10ms square wave
Junction temperature
Storage Temperature Range
1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbols
Reverse breakdown voltage
at IR=10mA
SD101AWS
SD101BWS
SD101CWS
Leakage current at VR=50V
VR=40V
VR=30V
SD101AWS
SD101BWS
SD101CWS
Forward voltage drop at IF=1mA
IF=15mA
Junction Capacitance at VR=0V ,f=1MHz
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR
Thermal resistance,junction to Ambient
VR
VR
VR
IR
IR
IR
VF
VF
VF
VF
VF
VF
CJ
CJ
CJ
trr
RqJA
1) Valid provided that electrodes are kept at ambient temperature
Symbols
VRRM
VRRM
VRRM
Ptot
IFSM
TJ
TSTG
Min.
60
50
40
SOD-323
(1.7+0.1
Dimensions in inches and (millimeters)
Value
60
50
40
400 ¹⁾
2.0
125
-55 to+150
Units
V
V
mW
A
C
C
Typ.
Max.
Unis
200
200
200
0.41
0.4
0.39
1
0.95
0.9
2.0
2.1
2.2
1
650 ¹⁾
V
V
V
nA
nA
nA
V
V
V
V
V
V
pF
pF
pF
ns
C/W
JINAN JINGHENG CO., LTD.
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