SD101AW Datasheet, PDF (1/1 Pages) Diodes Incorporated – SCHOTTKY BARRIER SWITCHING DIODE

SEMICONDUCTOR
SD101AW THRU SD101CW
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
For general purpose applications
The SD10AW to SD101CW series is a Metal-on-silicon Schottky barrier device
which is protected by a PN junction guard ring. The low forward voltage drop
and fast switching make it ideal for protection of MOS devices, steering,
biasing, and coupling diodes for fast switching and low logic level
applications
These diodes are also available in the Mini-MELF case with type
JF
designation LL101A to LL101C ,in the DO-35 case with type
designation SD101A to SD101C and in the SOD-323 case with type
designation SD103AWS to SW103CWS
MECHANICAL DATA
Case: SOD-123 plastic case
Weight: Approx. 0.01 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Peak Reverse Voltage
Porwer Dissipation (infinite Heat Sink)
SD101AW
SD101BW
SD101CW
Maximum Single cycle surge 10ms square wave
Junction temperature
Storage Temperature Range
1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbols
Reverse breakover voltage
at IR=10mA
SD101AW
SD101BW
SD101CW
Leakage current at VR=50V
VR=40V
VR=30V
SD101AW
SD101BW
SD101CW
Forward voltage drop at IF=1mA
IF=15mA
Junction Capacitance at VR=0V ,f=1MHz
SD101AW
SD101BQ
SD101CW
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR
Thermal resistance,junction to Ambient
VR
VR
VR
IR
IR
IR
VF
VF
VF
VF
VF
VF
CJ
CJ
CJ
trr
RqJA
1) Valid provided that electrodes are kept at ambient temperature
Symbols
VRRM
VRRM
VRRM
Ptot
IFSM
TJ
TSTG
Min.
60
50
40
SOD-123
(
Dimensions in inches and (millimeters)
Value
60
50
40
400 ¹⁾
2.0
125
-55 to+150
Units
V
V
mW
A
C
C
Typ.
Max.
Unis
V
V
V
200
nA
200
nA
200
nA
0.41
0.4
V
V
0.39
V
1
0.95
0.9
V
V
V
2.0
pF
2.1
pF
2.2
pF
1
ns
300 ¹⁾
K/W
JINAN JINGHENG CO., LTD.
2-110
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