MCLDB3 Datasheet, PDF (1/2 Pages) Jinan Jingheng (Group) Co.,Ltd – SILICON BIDIRECTIONAL DIAC

SEMICONDUCTOR
MCLDB3/MCLDC34/MCLDB4/MCLDB6
SILICON BIDIRECTIONAL DIAC
FEATURES
The three layer, two terminal, axial lead, hermetically sealed diacs are
designed specifically for triggering thyristors. They demonstrate low breakover
current at breakover voltage as they withstand peak pulse current, The breakover
symmetry is within three volts(DB3,DC34,DB4) or four volts(DB6). These diacs are
intended for use in thyrisitors phase control , circuits for lamp dimming, universal
motor speed control ,and heat control.
JF's DB3/DC34/DB4/DB6 are bi-directional trigged diode designed to operate
in conjunction with Triacs and SCR's
MECHANICAL DATA
Case: Micro-MELF glass case
Weight: Approx. 0.03 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Micro-MELF
Dimensions in inches and (millimeters)
Symbols
Parameters
PC
Power Dissipation on Printed
Circuit(L=10mm)
TA=50 C
ITRM
Repetitive Peak on-state
Current
tp=10ms
F=100Hz
TSTG/TJ
Storage and Operating Junction Temperature
ELECTRICAL CHARACTERISTICS
MCLDB3
Value
MCLDC34 MCLDB4 MCLDB6
150
Units
mW
2.0
2.0
2.0
16
A
-40 to+125/-40 to 110
C
Symbols
Parameters
VBO
I +VBO I-
I - VBO I
I+ VI
VO
IBO
tr
IB
Breakover Voltage (Note 2 )
Breakover Voltage Symmetry
Dynamic Breakover Voltage (Note1)
Output Voltage (Note 1 )
Breakover Current (Note1)
Rise Time (Note1)
Leakage Current (Note1)
Test Condition
Value
MCLDB3 MCLDC34 MCLDB4 MCLDB6
Units
C=22nF(Note 2)
See diagram 1
Min
28
30
35
Typ
32
34
40
Max
36
38
45
56
60
V
70
C=22nF(Note 2)
Max
+3
See diagram 1
+4
V
I=(IBO to IF=10mA)
See Diagram 1
Min
5
10
V
See Diagram 2
Min
5
V
C=22nF(Note 2)
Max
100
mA
See Diagram 3
Typ
1.5
mS
VB=0.5 VBO max
see diagram 1
Max
10
mA
Notes: 1.Electrical characteristics applicable in both forward and reverse directions.
2.Connected in parallel with the devices.
JINAN JINGHENG CO., LTD.
3-6
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