LL60 Datasheet, PDF (1/3 Pages) Weitron Technology – Schottky Barrier Diodes

SEMICONDUCTOR
LL60, LL60P
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Metal-on-silicon junction, majority carrier conduction
High current capability, Low forward voltage drop
Extremely low reverse current IR
Ultra speed switching characteristics
Small temperature coefficient of forward characteristics
Satisfactory Wave detection efficiency
For use in RECORDER¡¢TV¡¢RADIO¡¢TELEPHONE as detectors,super high
speed switching circuits, small current rectifier
MECHANICAL DATA
Case: MinMELF glass case (SOD- 80)
Polarity:color band denotes cathode end
Weight: Approx. 0.05gram
Mini-MELF
JF
Dimensions in inches and (millimeters)
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
VRRM
IF
IFSM
TSTG/TJ
TL
Parameters
Repetitive Peak Reverse Voltage
Forward Continuous Current
TA=25 C
Peak Forward Surge Current(t=1S)
Storage and junction Temperature Range
Maximum Lead Temperature for Soldering during 10S at 4mm from Case
Value
LL60
LL60P
20
30
30
50
150
400
-65 to+125
230
Units
Volts
mA
mA
C
C
ELECTRICAL CHARACTERISTICS
Symbols
VF
IR
CJ
h
trr
RqJA
Parameters
Forward Voltage
Reverse Current
Junction Capacitance
Detection Efficiency(See diagram 4)
Reverse Recovery time
Junction Ambient Thermal Resistance
Test Conditions
IF=1mA
IF=30mA
IF=200mA
VR=15V
VR=1V f=1MHz
VR=10V f=1MHz
LL60
LL60P
LL60
LL60P
LL60
LL60P
LL60
LL60P
VI=3V f=30MHz CL=10pF RL=3.8kW
IF=IR=1mA Irr=1mA Rc=100W
R JA
Min .
Value
Typ _.
0.35
0.26
0.70
0.70
1.0
5.0
4.0
10.0
60
350
Max .
0.5
0.5
1.0
1.0
5.0
10.0
1
JINAN JINGHENG CO., LTD.
2-1
NO.51 HEPING ROAD PR CHINA TEL:[phone] FAX:[phone]
Units
Volts
mA
pF
%
ns
C/W
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