LL48 Datasheet, PDF (1/3 Pages) General Semiconductor – Schottky Diodes

R
SEMICONDUCTOR
LL48
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
For general purpose applications
These diodes features very low turn-on voltage and fast
switching.
These devices are protected by a PN junction guard ring
against excessive voltage, such as electrostatic discharges.
JF
This diode is also available in the DO-35 case with type designation BAT48.
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
Case: MiniMELF glass case(SOD-80)
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
MiniMELF
0.142(3.6)
0.134(3.4)
0.063(1.6)
0.055(1.4)
0.019(0.48)
0.011(0.28)
Dimensions in inches and (millimeters)
Repetitive Peak Reveres Voltage
Forward Continuous Current at TA=25 C
Repetitive Peak Forward Current at tp<1s, d < 0.5,
Surge forward current at tp <10ms , TA=25 C
Power Dissipation at TA=65 C
TA=25 C
Junction temperature
Ambient Operating temperature Range
Storage Temperature Range
1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
Symbols
VRRM
IF
IFRM
IFSM
Ptot
TJ
TA
TSTG
Value
40
1)
350
1)
1
1)
7.5
1)
330
125
-65 to+125
-65 to+150
Units
V
mA
A
A
mW
C
C
C
Reverse Breakdown Voltage Tested with 100mA Pulses
Forward voltage
Pulse Test tp< 300ms, d < 2%
at IF=0.1mA,
at IF=10mA,
at IF=250mA
Leakage current
pulse test tp < 300ms ,d <2%
at VR=10V
at VR=10V, TJ=60 C
at VR=20V
at VR=20V, TJ=60 C
at VR=40V
at VR=40V, TJ=60 C
Symbols
Min.
V(BR)R
40
VF
VF
VF
IR
IR
IR
IR
IR
IR
Typ.
Max.
Unis
V
0.25
V
0.45
V
0.90
V
2
mA
15
mA
5
mA
25
mA
25
mA
50
mA
Junction Capacitance at VR=1V ,f=1MHz
Thermal resistance junction to ambient Air
1) Valid provided that electrodes are kept at ambient temperature
CJ
RqJA
2-56
2
300 ¹⁾
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD JINAN P.R. CHINA TEL:[phone] FAX:[phone]
pF
K/W
WWW.JIFUSEMICON.COM